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| FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench (R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 80 A, 60 V. RDS(ON) = 0.0095 @ VGS = 10 V RDS(ON) = 0.011 @ VGS = 6 V. * Critical DC electrical parameters specified at elevated temperature. * Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. * High performance trench technology for extremely low RDS(ON). * 175C maximum junction temperature rating. D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG TL Drain-Source Voltage Gate-Source Voltage Maximum Drain Current TA =25oC unless otherwise noted Parameter - Continuous (note 3) - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Maximum lead termperature for soldering purposes, 1/8" from case for 5 seconds FDP5645 FDB5645 Units V V A W W/C C C 60 20 80 300 125 0.83 -65 to +175 +275 Thermal Characteristics RJ C RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.2 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB5645 FDP5645 Device FDB5645 FDP5645 Reel Size 13" note 2 Tape width 24mm Quantity 800 units (c) 2000 Fairchild Semiconductor Corporation FDP5645/FDB5645 Rev B (W) FDP5645/FDB5645 Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter (Note 1) Test Conditions V DD = 40 V, ID = 80 A Min Typ Max Units 800 80 mJ A Drain-Source Avalanche Ratings Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 1) Off Characteristics BV DSS BVDSS TJ IDSS IGSSF IGSSR V GS(th) VGS(th) TJ RDS(on) V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 48 V, V GS = 20 V, V GS = 20 V, V GS = 0 V V DS = 0 V V DS = 0 V 2 -7.8 8 13 9 60 88 9.5 18 11 60 64 1 100 -100 4 V mV/C A nA nA V mV/C m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 40 A V GS =10V, ID = 40 A, TJ =125C V GS = 6 V, ID = 38 A V GS = 10 V, V DS = 10 V V DS = 5 V, ID = 40 A ID(on) gFS A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = 30 V, f = 1.0 MHz V GS = 0 V, 4468 810 198 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS IS V SD Notes: Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 30 V, V GS = 10 V, ID = 1 A, RGEN = 6 21 13 77 42 30 20 90 50 107 ns ns ns ns nC nC nC V DS = 30 V, V GS = 10 V ID = 80 A, 76 18 21 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 40 A Voltage 0.9 80 300 1.3 A A V 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2. TO-220 package is supplied in tube / rail @ 45 pieces per rail. 3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A FDP5645/FDB5645 Rev. B (W) FDP5645/FDB5645 Typical Characteristics 100 V GS = 10V 80 7.0V 5.0V 60 4.5V 40 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) 6.0V 2 1.8 1.6 V GS = 4.5V 1.4 5.0V 1.2 6.0V 1 8.0V 0.8 7.0V 10V 20 4.0V 0 0 1 2 3 4 5 V DS , DRAIN-SOURCE VOLTAGE (V) 0 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.024 2.2 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE RDS(ON) ON-RESISTANCE (OHM) , 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE ( oC) ID = 42A V GS = 10V ID = 42A 0.02 T A = 125o C 0.016 0.012 0.008 TA = 25o C 0.004 0 3 4 5 6 7 8 9 10 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 90 IS, REVERSE DRAIN CURRENT (A) 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 2 3 4 5 6 V GS, GATE TO SOURCE VOLTAGE (V) T A = 125o C 25oC -55 oC V DS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125o C 25o C -55 oC 0.1 1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP5645/FDB5645 Rev. B (W) FDP5645/FDB5645 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 85A 8 VDS = 10V 30V CAPACITANCE (pF) 6000 20V 5000 CISS 4000 f = 1MHz V GS = 0 V 6 3000 2000 4 2 1000 0 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) COSS CRSS 0 10 20 30 40 50 60 0 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 Figure 8. Capacitance Characteristics. 5000 SINGLE PULSE 4000 RJC = 1.2 oC/W T C = 25o C ID, DRAIN CURRENT (A) 100 POWER (W) 100 RDS(ON) LIMIT 10ms 100ms 100s 1ms 3000 2000 10 V GS = 10V SINGLE PULSE R JC = 1.2o C/W TC = 25oC DC 1000 1 0.1 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (ms) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 0.1 0.05 0.02 0.03 0.02 Single Pulse 0.01 0.01 0.05 0.1 0.5 1 5 t1 ,TIME (ms) 10 50 0.01 0.2 0.1 P(pk) 0.05 t1 t2 D = 0.5 R J C (t) = r(t) * R J C R J C = 1.2 C/W TJ - T = P * R J C (t) C Duty Cycle, D = t 1 / t 2 100 500 1000 , ) t ( r Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP5645/FDB5645 Rev. B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D |
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